SI4914BDY-T1-E3 datasheet(2/15 Pages) VISHAY

Part #	SI4914BDY-T1-E3

Description	Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

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Manufacturer	VISHAY [Vishay Siliconix]

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Document Number: 69654

S09-2109-Rev. E, 12-Oct-09

Vishay Siliconix

Si4914BDY

Notes:

a. Surface Mounted on 1" x 1" FR4 board.

b. Maximum under Steady State conditions is 120 °C/W for Channel 1 and 115 °C/W for Channel 2.

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Channel-1

Channel-2

Unit

Typ.

Max.

Typ.

Max.

Maximum Junction-to-Ambienta

t

≤ 10 s

RthJA

59

70

52

62.5

°C/W

Maximum Junction-to-Foot (Drain)

Steady State

RthJF

36

45

32

40

MOSFET SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter

Symbol

Test Conditions

Min.

Typ.a

Max.

Unit

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = 250 µA

Ch-1

30

V

Ch-2

30

VDS Temperature Coefficient

ΔV

DS/TJ

ID = 250 µA

Ch-1

35

mV/°C

VGS(th) Temperature Coefficient

ΔV

GS(th)/TJ

Ch-1

- 6.2

V

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 µA

Ch-1

1.2

2.7

Ch-2

1.2

2.7

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = 20 V

Ch-1

100

nA

Ch-2

100

Zero Gate Voltage Drain Current

IDSS

VDS = 30 V, VGS = 0 V

Ch-1

1

µA

Ch-2

100

VDS = 30 V, VGS = 0 V, TJ = 85 °C

Ch-1

15

Ch-2

10000

On-State Drain Currentb

ID(on)

VDS = 5 V, VGS = 10 V

Ch-1

20

A

Ch-2

20

Drain-Source On-State Resistanceb

RDS(on)

VGS = 10 V, ID = 8 A

Ch-1

0.0165

0.021

Ω

VGS = 10 V, ID = 8 A

Ch-2

0.0155

0.020

VGS = 4.5 V, ID = 6 A

Ch-1

0.0215

0.027

VGS = 4.5 V, ID = 6 A

Ch-2

0.020

0.025

Forward Transconductanceb

gfs

VDS = 15 V, ID = 8 A

Ch-1

29

S

VDS = 15 V, ID = 8 A

Ch-2

33

Diode Forward Voltageb

VSD

IS = 1.7 A, VGS = 0 V

Ch-1

0.77

1.1

V

IS = 1 A, VGS = 0 V

Ch-2

0.46

0.5

Dynamica

Total Gate Charge

Qg

Channel-1

VDS = 15 V, VGS = 4.5 V, ID = 8 A

Channel-2

VDS = 15 V, VGS = 4.5 V, ID = 8 A

Ch-1

6.7

10.5

nC

Ch-2

7.0

11.0

Gate-Source Charge

Qgs

Ch-1

2.8

Ch-2

2.8

Gate-Drain Charge

Qgd

Ch-1

2.0

Ch-2

2.0

Gate Resistance

Rg

Ch-1

2.9

6.0

Ω

Ch-2

2.0

4.0

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SI4914BDY-T1-E3 Datasheet(PDF) 2 Page - Vishay Siliconix

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