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SI5424DC Datasheet(PDF) 4 Page - Vishay Siliconix |
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SI5424DC Datasheet(HTML) 4 Page - Vishay Siliconix |
4 / 11 page www.vishay.com 4 Document Number: 73776 S-83054-Rev. B, 29-Dec-08 Vishay Siliconix Si5424DC TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Source-Drain Diode Forward Voltage Threshold Voltage 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.001 0.1 0.01 1 10 20 TA = 150 °C TA = 25 °C VSD -Source-to-Drain Voltage (V) 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Single Pulse Power 0.00 0.01 0.02 0.03 0.04 0.05 0.06 0246 8 10 ID = 4.8 A TA = 25 °C TA = 125 °C VGS - Gate-to-Source Voltage (V) 0 30 50 10 20 Time (s) 40 1 100 600 10 10-1 10-2 10-3 Safe Operating Area, Junction-to-Ambient 10 ms 100 ms DC 1 s 10 s 1 ms 0.001 100 1 0 0 1 1 1 . 0 0.01 10 0.1 10 TA = 25 C Single Pulse BVDSS Limited Limited by RDS(on)* VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified |
Similar Part No. - SI5424DC_08 |
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Similar Description - SI5424DC_08 |
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