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SI5513CDC-T1-GE3 Datasheet(PDF) 9 Page - Vishay Siliconix |
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SI5513CDC-T1-GE3 Datasheet(HTML) 9 Page - Vishay Siliconix |
9 / 16 page Document Number: 68806 S10-0547-Rev. C, 08-Mar-10 www.vishay.com 9 Vishay Siliconix Si5513CDC P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Source-Drain Diode Forward Voltage Threshold Voltage 0.1 1 10 100 0.0 0.20.4 0.60.8 1.0 1.2 TJ = 150 °C VSD -Source-to-Drain Voltage (V) TJ = 25 °C 0.6 0.7 0.8 0.9 1.0 1.1 1.2 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Single Pulse Power 0.00 0.06 0.12 0.18 0.24 0.30 0246 8 10 12 VGS - Gate-to-Source Voltage (V) TJ =25 °C TJ = 125 °C ID = - 2.4 A 0 10 20 30 40 50 60 Time (s) 1 100 0.01 0.001 0.0001 10 0.1 Safe Operating Area, Junction-to-Case VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 10 0.1 0.1 1 10 1 TA = 25 °C Single Pulse 1ms 10 ms 100 ms 0.01 1s,10s DC BVDSS Limited 100 100 µs Limited byRDS(on)* |
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