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SI6924AEDQ Datasheet(PDF) 4 Page - Vishay Siliconix |
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SI6924AEDQ Datasheet(HTML) 4 Page - Vishay Siliconix |
4 / 12 page www.vishay.com 4 Document Number: 72215 S-81056-Rev. B, 12-May-08 Vishay Siliconix Si6924AEDQ TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Output Characteristics On-Resistance vs. Drain Current On-Resistance vs. Junction Temperature 0 5 10 15 20 25 0.00 0.25 0.50 0.75 1.00 1.25 1.50 VGS = 5 thru 2,5 V 2 V VDS - Drain-to-Source Voltage (V) 0.00 0.01 0.02 0.03 0.04 0.05 04 8 12 16 20 VGS = 4.5 V VGS = 2.5 V ID - Drain Current (A) VGS = 3 V 0.6 0.8 1.0 1.2 1.4 1.6 1.8 - 50 - 25 0 25 50 75 100 125 150 VGS = 4.5 V ID = 4.6 A TJ - Junction Temperature (°C) Transfer Characteristics Gate Charge Source-Drain Diode Forward Voltage 0 5 10 15 20 25 0.0 0.5 1.0 1.5 2.0 2.5 3.0 25 °C TC = 125 °C - 55 °C VGS - Gate-to-Source Voltage (V) 0 1 2 3 4 5 012 34 567 VDS = 10 V ID = 4.6 A Qg - Total Gate Charge (nC) 1.0 1.2 1 10 20 0 0.4 0.6 0.8 TJ = 25 °C TJ = 150 °C VSD - Source-to-Drain Voltage (V) |
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