SI6943BDQ datasheet(2/4 Pages) VISHAY

Part #	SI6943BDQ

Description	Dual P-Channel 2.5-V (G-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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Vishay Siliconix

SPICE Device Model Si6943BDQ

SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Simulated

Data

Measured

Data

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = −250 µA

0.79

V

On-State Drain Current

a

ID(on)

VDS = −5 V, VGS = −4.5 V

93

A

VGS = −4.5 V, ID = −2.5 A

0.061

0.06

Drain-Source On-State Resistance

a

rDS(on)

VGS = −2.5 V, ID = −1.9 A

0.081

0.08

Ω

Forward Transconductance

a

gfs

VDS = −15 V, ID = −2.5 A

8

S

Diode Forward Voltage

a

VSD

IS = −1 A, VGS = 0 V

−0.78

−0.75

V

Dynamic

b

Total Gate Charge

Qg

5.2

5.7

Gate-Source Charge

Qgs

0.8

Gate-Drain Charge

Qgd

VDS = −6 V, VGS = −4.5 V, ID = −2.5 A

1.6

nC

Turn-On Delay Time

td(on)

16

15

Rise Time

tr

14

35

Turn-Off Delay Time

td(off)

71

35

Fall Time

tf

VDD = −6 V, RL = 6 Ω

ID ≅ −1 A, VGEN = −4.5 V, RG = 6 Ω

14

30

Source-Drain Reverse Recovery Time

trr

IF = −1 A, di/dt = 100 A/µs

33

30

ns

Notes

a. Pulse test; pulse width

≤ 300 µs, duty cycle ≤ 2%.

b. Guaranteed by design, not subject to production testing.

2

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Document Number: 70316

S-60147

Rev. B, 13-Feb-06

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