SI6981DQ datasheet(2/4 Pages) VISHAY

Part #	SI6981DQ

Description	Dual P-Channel 1.8-V (G-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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Vishay Siliconix

SPICE Device Model Si6981DQ

SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Simulated

Data

Measured

Data

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = −300 µA

0.80

V

On-State Drain Current

a

ID(on)

VDS = −5 V, VGS = −4.5 V

205

A

VGS = −4.5 V, ID = −4.8 A

0.027

0.026

Drain-Source On-State Resistance

a

rDS(on)

VGS = −2.5 V, ID = −4.2 A

0.034

Ω

VGS = −1.8 V, ID = −3.5 A

0.047

0.046

Forward Transconductance

a

gfs

VDS = −5 V, ID = −4.8 A

19

17

S

Diode Forward Voltage

a

VSD

IS = −1 A, VGS = 0 V

−0.78

−0.65

V

Dynamic

b

Total Gate Charge

Qg

13.5

15

Gate-Source Charge

Qgs

2.4

Gate-Drain Charge

Qgd

VDS = −10 V, VGS = −4.5 V, ID = −4.8 A

3.8

nC

Turn-On Delay Time

td(on)

37

35

Rise Time

tr

55

Turn-Off Delay Time

td(off)

117

120

Fall Time

tf

VDD = −10 V, RL = 10 Ω

ID ≅ −1 A, VGEN = −4.5 V, RG = 6 Ω

31

52

ns

Notes

a. Pulse test; pulse width

≤ 300 µs, duty cycle ≤ 2%.

b. Guaranteed by design, not subject to production testing.

2

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Document Number: 72328

S-60146

Rev. B, 13-Feb-06

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