Si7106DN-T1-E3 datasheet(3/6 Pages) VISHAY

Part #	Si7106DN-T1-E3

Description	N-Channel 20-V (D-S) Fast Switching MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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Document Number: 73142

S-81529-Rev. E, 30-Jun-08

www.vishay.com

3

Vishay Siliconix

Si7106DN

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

On-Resistance vs. Drain Current

Gate Charge

Source-Drain Diode Forward Voltage

0.000

0.002

0.004

0.006

0.008

0.010

0.012

0.014

0.016

0

102030

405060

ID - Drain Current (A)

VGS = 2.5 V

VGS = 4.5 V

0

1

2

3

4

5

04

8

12

16

20

VDS = 10 V

ID = 19.5 A

Qg - Total Gate Charge (nC)

VSD - Source-to-Drain Voltage (V)

0.0

0.2

0.4

0.6

0.8

1.0

1.2

TJ = 25 °C

60

10

1

TJ = 150 °C

Capacitance

On-Resistance vs. Junction Temperature

On-Resistance vs. Gate-to-Source Voltage

0

700

1400

2100

2800

3500

0

5

10

15

20

Ciss

VDS - Drain-to-Source Voltage (V)

Coss

Crss

0.6

0.8

1.0

1.2

1.4

1.6

- 50

- 25

0

25

50

75

100

125

150

VGS = 4.5 V

ID = 19.5 A

TJ - Junction Temperature (°C)

0.000

0.004

0.008

0.012

0.016

0.020

0.024

0

1234

5

VGS - Gate-to-Source Voltage (V)

ID = 19.5 A

ID = 5 A

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Si7106DN-T1-E3 Datasheet(PDF) 3 Page - Vishay Siliconix

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