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SI7454DP Datasheet(PDF) 2 Page - Vishay Siliconix |
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SI7454DP Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 4 page Vishay Siliconix SPICE Device Model Si7454DP SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Simulated Data Measured Data Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 2.8 V On-State Drain Current a ID(on) VDS ≥ 5 V, VGS = 10 V 177 A VGS = 10 V, ID = 7.8 A 0.028 0.028 Drain-Source On-State Resistance a rDS(on) VGS = 6 V, ID = 7.2 A 0.029 0.032 Ω Forward Transconductance a gfs VDS = 15 V, ID = 7.8 A 30 25 S Forward Voltage a VSD IS = 4 A, VGS = 0 V 0.74 0.80 V Dynamic b Total Gate Charge Qg 27 24 Gate-Source Charge Qgs 7.6 7.6 Gate-Drain Charge Qgd VDS = 50 V, VGS = 10 V, ID = 7.8 A 5.4 5.4 nC Turn-On Delay Time td(on) 13 16 Rise Time tr 17 10 Turn-Off Delay Time td(off) 31 35 Fall Time tf VDD = 50 V, RL = 50 Ω ID ≅ 1 A, VGEN = 10 V, RG = 6 Ω 55 20 ns Notes a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%. b. Guaranteed by design, not subject to production testing. 2 www.vishay.com Document Number: 72966 S-60145 Rev. B, 13-Feb-06 |
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