SI7540DP-T1-GE3 datasheet(6/15 Pages) VISHAY

Part #	SI7540DP-T1-GE3

Description	N- and P-Channel 12-V (D-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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Document Number: 71911

S09-0227-Rev. F, 09-Feb-09

Vishay Siliconix

Si7540DP

P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Output Characteristics

On-Resistance vs. Drain Current

Gate Charge

0

4

8

12

16

20

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

VGS = 5 V thru 2.5 V

2 V

VDS - Drain-to-Source Voltage (V)

1.5 V

0.00

0.03

0.06

0.09

0.12

0.15

04

8

12

16

20

ID - Drain Current (A)

VGS = 2.5 V

VGS = 4.5 V

0

1

2

3

4

5

048

12

16

VDS = 6 V

ID = 8.9 A

Q

- Total Gate Charge (nC)

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

0

4

8

12

16

20

0.0

0.5

1.0

1.5

2.0

2.5

3.0

TC = 125 °C

- 55 °C

25 °C

VGS - Gate-to-Source Voltage (V)

0

500

1000

1500

2000

2500

0

246

8

10

12

VDS - Drain-to-Source Voltage (V)

Crss

Coss

Ciss

0.6

0.8

1.0

1.2

1.4

1.6

- 50

- 25

0

25

50

75

100

125

150

VGS = 4.5 V

ID = 8.9 A

TJ - Junction Temperature (°C)

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SI7540DP-T1-GE3 Datasheet(PDF) 6 Page - Vishay Siliconix

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