Electronic Components Datasheet Search |
|
SI7540DP-T1-GE3 Datasheet(PDF) 6 Page - Vishay Siliconix |
|
SI7540DP-T1-GE3 Datasheet(HTML) 6 Page - Vishay Siliconix |
6 / 15 page www.vishay.com 6 Document Number: 71911 S09-0227-Rev. F, 09-Feb-09 Vishay Siliconix Si7540DP P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Output Characteristics On-Resistance vs. Drain Current Gate Charge 0 4 8 12 16 20 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VGS = 5 V thru 2.5 V 2 V VDS - Drain-to-Source Voltage (V) 1.5 V 0.00 0.03 0.06 0.09 0.12 0.15 04 8 12 16 20 ID - Drain Current (A) VGS = 2.5 V VGS = 4.5 V 0 1 2 3 4 5 048 12 16 VDS = 6 V ID = 8.9 A Q - Total Gate Charge (nC) Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature 0 4 8 12 16 20 0.0 0.5 1.0 1.5 2.0 2.5 3.0 TC = 125 °C - 55 °C 25 °C VGS - Gate-to-Source Voltage (V) 0 500 1000 1500 2000 2500 0 246 8 10 12 VDS - Drain-to-Source Voltage (V) Crss Coss Ciss 0.6 0.8 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 VGS = 4.5 V ID = 8.9 A TJ - Junction Temperature (°C) |
Similar Part No. - SI7540DP-T1-GE3 |
|
Similar Description - SI7540DP-T1-GE3 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.NET |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |