SI7792DP-T1-GE3 datasheet(5/13 Pages) VISHAY

Part #	SI7792DP-T1-GE3

Description	N-Channel 30 V (D-S) MOSFET with Schottky Diode

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Manufacturer	VISHAY [Vishay Siliconix]

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5 / 13 page

Document Number: 67641

S11-0856-Rev. A, 02-May-11

www.vishay.com

5

Vishay Siliconix

Si7792DP

New Product

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper

dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package

limit.

Current Derating*

0

36

72

108

144

180

0

25

50

75

100

125

150

T

C - Case Temperature (°C)

Package Limited

Power, Junction-to-Case

0

25

50

75

100

125

0

255075

100

125

150

T

C - Case Temperature (°C)

Power, Junction-to-Ambient

0.0

0.6

1.2

1.8

2.4

3.0

025

50

75

100

125

150

T

A - Ambient Temperature (°C)

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SI7792DP-T1-GE3 Datasheet(PDF) 5 Page - Vishay Siliconix

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