SI7794DP datasheet(1/13 Pages) VISHAY

Part #	SI7794DP

Description	N-Channel 30 V (D-S) MOSFET with Schottky Diode

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Manufacturer	VISHAY [Vishay Siliconix]

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Vishay Siliconix

Si7794DP

New Product

Document Number: 67692

S11-1150-Rev. A, 13-Jun-11

www.vishay.com

1

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

N-Channel 30 V (D-S) MOSFET with Schottky Diode

FEATURES

•

Halogen-free According to IEC 61249-2-21

Definition

•

SkyFET™ Monolithic TrenchFET® Gen III

Power MOSFET and Schottky Diode

•

100 % Rg Tested

•

100 % Avalanche Tested

•

Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

•

Low Side in Vcore, System and Memory

- Notebook PCs

PRODUCT SUMMARY

VDS (V)

RDS(on) ()

ID (A)

a

Qg (Typ.)

30

0.0034 at VGS = 10 V

60

23 nC

0.0042 at VGS = 4.5 V

60

Ordering Information: Si7794DP-T1-GE3 (Lead (Pb)-free and Halogen-free)

1

2

3

4

5

6

7

8

S

G

D

6.15 mm

5.15 mm

PowerPAK® SO-8

Bottom View

N-Channel MOSFET

G

S

D

Schottky

Diode

Notes:

a. Package limited.

b. Surface mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. See solder profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper

(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not

required to ensure adequate bottom side solder interconnection.

e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.

f. Maximum under steady state conditions is 70 °C/W.

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

30

V

Gate-Source Voltage

VGS

± 20

Continuous Drain Current (TJ = 150 °C)

TC = 25 °C

ID

60a

A

TC = 70 °C

60a

TA = 25 °C

28.6b, c

TA = 70 °C

22.8b, c

Pulsed Drain Current (t = 300 µs)

IDM

80

Continuous Source-Drain Diode Current

TC = 25 °C

IS

60a

TA = 25 °C

5.6b, c

Single Pulse Avalanche Current

L =

0.1 mH

IAS

40

Single Pulse Avalanche Energy

EAS

80

mJ

Maximum Power Dissipation

TC = 25 °C

PD

48

W

TC = 70 °C

31

TA = 25 °C

5.0b, c

TA = 70 °C

3.2b, c

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

Soldering Recommendations (Peak Temperature)d, e

260

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambientb, f

t

 10 s

RthJA

20

25

°C/W

Maximum Junction-to-Case (Drain)

Steady State

RthJC

2.1

2.6

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