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SI7812DN-T1-E3 Datasheet(PDF) 5 Page - Vishay Siliconix |
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SI7812DN-T1-E3 Datasheet(HTML) 5 Page - Vishay Siliconix |
5 / 14 page Document Number: 73332 S-83050-Rev. D, 29-Dec-08 www.vishay.com 5 Vishay Siliconix Si7812DN TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Source-Drain Diode Forward Voltage Threshold Voltage 1.0 1.2 1 10 30 0.00 0.2 0.4 0.6 0.8 TJ = 25 °C TJ = 150 °C VSD - Source-to-Drain Voltage (V) 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0246 8 10 ID = 7.2 A VGS - Gate-to-Source Voltage (V) TJ = 25 °C TJ = 125 °C 0 30 50 10 20 Time (s) 40 10 1000 1 0.1 0.01 100 Safe Operating Area, Junction-to-Ambient 10 0.1 0.1 1 10 100 0.001 0.01 VDS - Drain-to-Source Voltage (V) 1 TA = 25 °C Single Pulse BVDSS Limited 100 µs 1 ms 100 * VGS minimum VGS at which RDS(on) is specified Limited by RDS(on)* DC 10 ms 100 ms 10 s 1 s |
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