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SI7994DP-T1-GE3 Datasheet(PDF) 4 Page - Vishay Siliconix |
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SI7994DP-T1-GE3 Datasheet(HTML) 4 Page - Vishay Siliconix |
4 / 13 page www.vishay.com 4 Document Number: 69974 S-80895-Rev. B, 21-Apr-08 Vishay Siliconix Si7994DP New Product TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Source-Drain Diode Forward Voltage Threshold Voltage 0.0 0.2 0.4 0.6 0.8 1.0 1.2 TJ = 150 °C 10 VSD -Source-to-Drain Voltage (V) 1 100 TJ = 25 °C 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Single Pulse Power (Junction-to-Ambient) 0.000 0.004 0.008 0.012 0.016 02 4 6 8 10 VGS - Gate-to-Source Voltage (V) TJ = 25 °C TJ = 125 °C ID =20A 0 10 20 30 40 50 0.01 1 10 1000 0.1 Time (s) 100 Safe Operating Area, Junction-to-Ambient 0.01 100 1 100 0.01 0.1 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 1ms 10 ms 100 ms 0.1 1 10 10 TA = 25 °C Single Pulse Limited byRDS(on)* 1s DC 10 s 100 µs BVDSS |
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