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SI8402DB Datasheet(PDF) 3 Page - Vishay Siliconix |
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SI8402DB Datasheet(HTML) 3 Page - Vishay Siliconix |
3 / 10 page Document Number: 72657 S-82118-Rev. C, 08-Sep-08 www.vishay.com 3 Vishay Siliconix Si8402DB TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted On-Resistance vs. Drain Current Gate Charge Source-Drain Diode Forward Voltage 0.00 0.01 0.02 0.03 0.04 0.05 0.06 0 5 10 15 20 25 30 ID - Drain Current (A) VGS = 2.5 V VGS = 4.5 V VGS = 1.8 V 0 1 2 3 4 5 04 8 12 16 20 VDS = 10 V ID = 1 A Qg - Total Gate Charge (nC) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD - Source-to-Drain Voltage (V) TJ = 150 °C TJ = 25 °C 30 10 1 Capacitance On-Resistance vs. Junction Temperature On-Resistance vs. Gate-to-Source Voltage 0 500 1000 1500 2000 2500 04 8 12 16 20 Crss Coss Ciss VDS - Drain-to-Source Voltage (V) 0.8 0.9 1.0 1.1 1.2 1.3 1.4 - 50 - 25 0 25 50 75 100 125 150 VGS = 4.5 V ID = 1 A TJ - Junction Temperature (°C) 0.00 0.02 0.04 0.06 0.08 01 2 3 45 VGS - Gate-to-Source Voltage (V) ID = 1 A |
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