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SIE726DF Datasheet(PDF) 4 Page - Vishay Siliconix |
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SIE726DF Datasheet(HTML) 4 Page - Vishay Siliconix |
4 / 10 page www.vishay.com 4 Document Number: 68626 S09-1338-Rev. B, 13-Jul-09 Vishay Siliconix SiE726DF New Product TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Source-Drain Diode Forward Voltage Reverse Current vs. Junction Temperature 0.0 0.2 0.4 0.6 0.8 1.0 TJ = 150 °C 10 VSD - Source-to-Drain Voltage (V) 1 100 TJ = 25 °C 10-6 10-5 10-4 10-3 10-2 10-1 1 0 25 50 75 100 125 150 TJ - Temperature (°C) IDSX at 10 V IDSX at 20 V IDSX at 30 V On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient 0.000 0.002 0.004 0.006 0.008 0 246 8 10 V GS - Gate-to-Source Voltage (V) TJ = 25 °C TJ = 125 °C ID =25A 0 30 50 10 20 Time (s) 40 10 1000 1 0.1 0.01 100 Safe Operating Area, Junction-to-Ambient 0.01 100 1 100 0.01 0.1 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 1ms 10 ms 100 ms 0.1 1 10 10 TA = 25 °C Single Pulse Limited byRDS(on)* 1s DC 10 s BVDSS Limited |
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