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Document Number: 68626

S09-1338-Rev. B, 13-Jul-09

Vishay Siliconix

SiE726DF

New Product

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Source-Drain Diode Forward Voltage

Reverse Current vs. Junction Temperature

0.0

0.2

0.4

0.6

0.8

1.0

10

1

100

1

0

25

50

75

100

125

150

IDSX at 10 V

IDSX at 20 V

IDSX at 30 V

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power, Junction-to-Ambient

0.000

0.002

0.004

0.006

0.008

0

246

8

10

V

0

30

50

10

20

Time (s)

40

10

1000

1

0.1

0.01

100

Safe Operating Area, Junction-to-Ambient

0.01

100

1

100

0.01

0.1

1ms

10 ms

100 ms

0.1

1

10

10

Single Pulse

1s

DC

10 s

BVDSS

Limited