Document Number: 93184

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Revision: 19-May-10

9

T40HFL, T70HFL, T85HFL Series

Fast Recovery Diodes

(T-Modules), 40 A/70 A/85 A

Vishay Semiconductors

Fig. 31 - Recovery Time Characteristics

Fig. 32 - Recovery Charge Characteristics

Fig. 33 - Recovery Current Characteristics

Fig. 34 - Recovery Time Characteristics

Fig. 35 - Recovery Charge Characteristics

Fig. 36 - Recovery Current Characteristics

0.8

0.9

1

1.1

1.2

1.3

0

0

1

0

1

100A

50A

200A

Ra te Of Fall Of Forward Current - di/ d t (A/ µs)

I

= 300A

T85HFL..S05

T = 125°C

FM

J

6

9

12

15

18

21

24

27

30

10 20 30 40 50 60 70 80 90 100

200A

Ra te Of Fall Of Forwa rd Current - di/ d t (A/ µs)

T85HFL..S05

T = 125°C

100A

50A

J

I

= 300A

FM

10

15

20

25

30

35

10 20 30 40 50 60 70 80 90 100

100A

50A

200A

Ra te Of Fall Of Forwa rd Current - di/ dt (A/ µs)

T85HFL..S05

T = 125°C

I

= 300A

J

FM

1

1.1

1.2

1.3

1.4

1.5

1.6

1.7

1.8

1.9

2

0

0

1

0

1

100A

50A

200A

Ra te Of Fa ll Of Forward Current - di/ dt (A/ µs)

T85HFL..S10

T = 125°C

I

= 300A

J

FM

10

15

20

25

30

35

40

45

50

55

10 20 30 40 50 60 70 80 90 100

200A

Ra te Of Fa ll Of Forwa rd Current - di/ d t (A/ µs)

100A

50A

T85HFL..S10

T = 125°C

J

I

= 300A

FM

15

20

25

30

35

40

45

50

55

60

10 20 30 40 50 60 70 80 90 100

100A

50A

200A

I

= 300A

T85HFL..S10

T = 125°C

Rate Of Fall Of Forwa rd Current - d i/ dt (A/µs)

FM

J