TCRT5000L datasheet(2/12 Pages) VISHAY

Part #	TCRT5000L

Description	Reflective Optical Sensor with Transistor Output

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Manufacturer	VISHAY [Vishay Siliconix]

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For technical questions, contact: sensorstechsupport@vishay.com

Document Number: 83760

2

Rev. 1.7, 17-Aug-09

TCRT5000, TCRT5000L

Vishay Semiconductors

Reflective Optical Sensor with

Transistor Output

Note

(1) Tamb = 25 °C, unless otherwise specified

ABSOLUTE MAXIMUM RATINGS

Fig. 1 - Power Dissipation Limit vs. Ambient Temperature

Note

(1) Tamb = 25 °C, unless otherwise specified

(2) See figure 3

(3) Test surface: mirror (Mfr. Spindler a. Hoyer, Part No. 340005)

OUTPUT (DETECTOR)

Collector emitter voltage

VCEO

70

V

Emitter collector voltage

VECO

5V

Collector current

IC

100

mA

Power dissipation

Tamb ≤ 55 °C

PV

100

mW

Junction temperature

Tj

100

°C

SENSOR

Total power dissipation

Tamb ≤ 25 °C

Ptot

200

mW

Ambient temperature range

Tamb

- 25 to + 85

°C

Storage temperature range

Tstg

- 25 to + 100

°C

Soldering temperature

2 mm from case, t

≤ 10 s

Tsd

260

°C

ABSOLUTE MAXIMUM RATINGS (1)

PARAMETER

TEST CONDITION

SYMBOL

VALUE

UNIT

0

100

200

300

0

95 11071

Tamb - Ambient Temperature (°C)

IR - diode

Coupled device

Phototransistor

25

50

75

100

BASIC CHARACTERISTICS (1)

PARAMETER

TEST CONDITION

SYMBOL

MIN.

TYP.

MAX.

UNIT

INPUT (EMITTER)

Forward voltage

IF = 60 mA

VF

1.25

1.5

V

Junction capacitance

VR = 0 V, f = 1 MHz

Cj

17

pF

Radiant intensity

IF = 60 mA, tp = 20 ms

Ie

21

mW/sr

Peak wavelength

IF = 100 mA

λ

P

940

nm

Virtual source diameter

Method: 63 % encircled energy

d

2.1

mm

OUTPUT (DETECTOR)

Collector emitter voltage

IC = 1 mA

VCEO

70

V

Emitter collector voltage

Ie = 100 µA

VECO

7V

Collector dark current

VCE = 20 V, IF = 0 A, E = 0 lx

ICEO

10

200

nA

SENSOR

Collector current

VCE = 5 V, IF = 10 mA,

D = 12 mm

IC (2) (3)

0.5

1

2.1

mA

Collector emitter saturation

voltage

IF = 10 mA, IC = 0.1 mA,

D = 12 mm

VCEsat (2) (3)

0.4

V

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