TFBS4711 datasheet(4/12 Pages) VISHAY

Part #	TFBS4711

Description	Serial Infrared Transceiver SIR, 115.2 kbit/s, 2.4 V to 5.5 V Operation

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Manufacturer	VISHAY [Vishay Siliconix]

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TFBS4711

Vishay Semiconductors Serial Infrared Transceiver SIR, 115.2 kbit/s,

2.4 V to 5.5 V Operation

www.vishay.com

For technical questions within your region, please contact one of the following:

irdasupportAM@vishay.com, irdasupportAP@vishay.com, irdasupportEU@vishay.com

Document Number: 82633

4

Rev. 3.0, 19-Nov-10

Notes

(1) Tested at Tamb = 25 °C, VCC1 = VCC2 = 2.4 V to 5.5 V unless otherwise noted.

Typical values are for design aid only, not guaranteed nor subject to production testing.

(2) SD mode becomes active when SD is set high for more than 0.2 µs. In SD mode the detector is disabled and the output disconnected.

ELECTRICAL CHARACTERISTICS (1)

PARAMETER

TEST CONDITIONS

SYMBOL

MIN.

TYP.

MAX.

UNIT

TRANSCEIVER

Supply voltage

VCC1

2.4

5.5

V

Operating temperature range

TA

- 25

+ 85

°C

Data rates

9.6

115.2

kbit/s

Idle supply current at VCC1

(receive mode, no signal)

SD = low,

Tamb = - 25 °C to + 85 °C

independent of ambient light,

VCC1 = VCC2 = 2.4 V to 5.5 V

ICC1

40

70

150

µA

SD = low, Tamb = 25 °C,

VCC1 = VCC2 = 2.4 V to 5.5 V

ICC1

40

70

100

µA

Average dynamic supply

current, transmitting

IIRED = 300 mA, 20 % duty cycle

ICC1

0.6

2

mA

Standby (SD) (2) supply current

SD = high,

Tamb = - 25 °C to + 85 °C,

independent of ambient light

ISD

0.01

1

µA

RXD to VCC1 impedance

RRXD

400

500

600

k



Input voltage low (TXD, SD)

VILo

- 0.3

0.4

V

Input voltage high (SD)

For compliance with ISD spec.

VIHi

VCC1 - 0.3

6

V

Input voltage high (TXD)

VIHi

VCC1 - 0.5

6

V

Timing logic decision level

0.5 x VCC1

Input leakage current low

VILo  0.3 V

IILo

0.01

10

µA

Input leakage current high

VIHi  VCC1 - 0.3 V

IIHi

0.01

10

µA

Input capacitance (TXD, SD)

CIN

5pF

Output voltage low, RXD

Cload = 8 pF, IOLo  |+ 500 µA|

VOLo

0.4

V

Output voltage high, RXD

IOH = - 200 µA

VOHi

0.8 x VCC1

VCC1

V

OPTOELECTRONIC CHARACTERISTICS (1)

PARAMETER

TEST CONDITIONS

SYMBOL

MIN.

TYP.

MAX.

UNIT

RECEIVER

Minimum irradiance Ee in

angular range (3)

9.6 kbit/s to 115.2 kbit/s

 = 850 nm to 900 nm,

 = 0°, 15°

Ee

35

(3.5)

80

(8)

mW/m2

(µW/cm2)

Maximum irradiance Ee in

angular range (4)

 = 850 nm to 900 nm

Ee

5

(500)

kW/m2

(mW/cm2)

Maximum no detection

irradiance (2)

 = 850 nm to 900 nm,

tr, tf < 40 ns,

tpo = 1.6 µs at f = 115 kHz,

no output signal allowed

Ee

4

(0.4)

mW/m2

(µW/cm2)

Rise time of output signal

10 % to 90 %, CL = 8 pF

tr(RXD)

10

30

80

ns

Fall time of output signal

90 % to 10 %, CL = 8 pF

tf(RXD)

10

30

80

ns

RXD pulse width of output signal

Input pulse length > 1.2 µs

tPW

1.7

2.2

3

µs

Stochastic jitter, leading edge

Input irradiance = 100 mW/m2,

 115.2 kbit/s

350

ns

Standby/shutdown delay,

receiver startup time

After shutdown active

or power-on

500

µs

Latency

tL

50

150

µs

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