Document Number: 89340

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Revision: 19-Apr-11

1

This document is subject to change without notice.

High Current Density Surface Mount

Trench MOS Barrier Schottky Rectifier

V10P45

Vishay General Semiconductor

New Product

FEATURES

• Very low profile - typical height of 1.1 mm

• Ideal for automated placement

• Trench MOS Schottky technology

• Low forward voltage drop, low power losses

• High efficiency operation

• Meets MSL level 1, per J-STD-020, LF maximum peak of

260 °C

• Compliant

to

RoHS

Directive

2002/95/EC

and

in

accordance to WEEE 2002/96/EC

• Halogen-free according to IEC 61249-2-21 definition

TYPICAL APPLICATIONS

For use in low voltage high frequency DC/DC converters,

freewheeling, and polarity protection applications.

MECHANICAL DATA

Case: TO-277A (SMPC)

Molding compound meets UL 94 V-0 flammability rating

Base P/N-M3 - halogen-free, RoHS compliant, and

commercial grade

Base P/NH-M3 - halogen-free, RoHS compliant, and

automotive grade

Terminals:

Matte

tin

plated

leads,

solderable

per

J-STD-002 and JESD 22-B102

M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix

meets JESD 201 class 2 whisker test

Notes

PRIMARY CHARACTERISTICS

10 A

45 V

180 A

0.41 V

150 °C

K

2

1

TO-277A (SMPC)

TMBS

®

eSMP

Anode 1

Anode 2

Cathode

K

PARAMETER

SYMBOL

V10P45

UNIT

Device marking code

V1045

Maximum repetitive peak reverse voltage

45

V

Maximum DC forward current

10

A

4.4

Peak forward surge current 10 ms single half sine-wave

superimposed on rated load

180

A

Operating junction and storage temperature range

- 40 to + 150

°C