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VESD08-02V-G-08 Datasheet(PDF) 3 Page - Vishay Siliconix |
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VESD08-02V-G-08 Datasheet(HTML) 3 Page - Vishay Siliconix |
3 / 5 page VESDxx-02V Single ESD-Protection Diode in SOD-523 Vishay Semiconductors Document Number: 83367 For technical questions, contact: ESDprotection@vishay.com www.vishay.com Rev. 1.0, 08-Nov-10 3 ELECTRICAL CHARACTERISTICS VESD01-02V PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT Protection paths Number of lines which can be protected Nchannel - - 1 lines Reverse working voltage at IRmax. VRWM 1- - V Reverse current at VRWM IR - - 100 µA Reverse breakdown voltage at IR = 1 mA VBR 1.5 - - V Reverse clamping voltage at IPP (see fig. 1) VC -9- V Capacitance at VR = 0 V; f = 1 MHz CD - 180 - pF ELECTRICAL CHARACTERISTICS VESD03-02V PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT Protection paths Number of lines which can be protected Nchannel - - 1 lines Reverse working voltage at IRmax. VRWM 3- - V Reverse current at VRWM IR -- 20 µA Reverse breakdown voltage at IR = 1 mA VBR 4- - V Reverse clamping voltage at IPP (see fig. 1) VC -12- V Capacitance at VR = 0 V; f = 1 MHz CD - 110 - pF ELECTRICAL CHARACTERISTICS VESD05-02V PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT Protection paths Number of lines which can be protected Nchannel - - 1 lines Reverse working voltage at IRmax. VRWM 5- - V Reverse current at VRWM IR -- 0.1 µA Reverse breakdown voltage at IR = 1 mA VBR 6.5 - - V Reverse clamping voltage at IPP (see fig. 1) VC -20- V Capacitance at VR = 0 V; f = 1 MHz CD -55- pF ELECTRICAL CHARACTERISTICS VESD08-02V PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT Protection paths Number of lines which can be protected Nchannel - - 1 lines Reverse working voltage at IRmax. VRWM 8- - V Reverse current at VRWM IR -- 0.1 µA Reverse breakdown voltage at IR = 1 mA VBR 9- - V Reverse clamping voltage at IPP (see fig. 1) VC -30- V Capacitance at VR = 0 V; f = 1 MHz CD -35- pF ELECTRICAL CHARACTERISTICS VESD12-02V PARAMETER TEST CONDITIONS/REMARKS SYMBOL MIN. TYP. MAX. UNIT Protection paths Number of lines which can be protected Nchannel - - 1 lines Reverse working voltage at IRmax. VRWM 12 - - V Reverse current at VRWM IR -- 0.1 µA Reverse breakdown voltage at IR = 1 mA VBR 14 - - V Reverse clamping voltage at IPP (see fig. 1) VC -25- V Capacitance at VR = 0 V; f = 1 MHz CD -30- pF |
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