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VESD08-02V-G-08 Datasheet(PDF) 3 Page - Vishay Siliconix

Part # VESD08-02V-G-08
Description  Single ESD-Protection Diode in SOD-523
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

VESD08-02V-G-08 Datasheet(HTML) 3 Page - Vishay Siliconix

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VESDxx-02V
Single ESD-Protection Diode in
SOD-523
Vishay Semiconductors
Document Number: 83367
For technical questions, contact: ESDprotection@vishay.com
www.vishay.com
Rev. 1.0, 08-Nov-10
3
ELECTRICAL CHARACTERISTICS VESD01-02V
PARAMETER
TEST CONDITIONS/REMARKS
SYMBOL
MIN.
TYP.
MAX.
UNIT
Protection paths
Number of lines which can be protected
Nchannel
-
-
1
lines
Reverse working voltage
at IRmax.
VRWM
1-
-
V
Reverse current
at VRWM
IR
-
-
100
µA
Reverse breakdown voltage
at IR = 1 mA
VBR
1.5
-
-
V
Reverse clamping voltage
at IPP (see fig. 1)
VC
-9-
V
Capacitance
at VR = 0 V; f = 1 MHz
CD
-
180
-
pF
ELECTRICAL CHARACTERISTICS VESD03-02V
PARAMETER
TEST CONDITIONS/REMARKS
SYMBOL
MIN.
TYP.
MAX.
UNIT
Protection paths
Number of lines which can be protected
Nchannel
-
-
1
lines
Reverse working voltage
at IRmax.
VRWM
3-
-
V
Reverse current
at VRWM
IR
--
20
µA
Reverse breakdown voltage
at IR = 1 mA
VBR
4-
-
V
Reverse clamping voltage
at IPP (see fig. 1)
VC
-12-
V
Capacitance
at VR = 0 V; f = 1 MHz
CD
-
110
-
pF
ELECTRICAL CHARACTERISTICS VESD05-02V
PARAMETER
TEST CONDITIONS/REMARKS
SYMBOL
MIN.
TYP.
MAX.
UNIT
Protection paths
Number of lines which can be protected
Nchannel
-
-
1
lines
Reverse working voltage
at IRmax.
VRWM
5-
-
V
Reverse current
at VRWM
IR
--
0.1
µA
Reverse breakdown voltage
at IR = 1 mA
VBR
6.5
-
-
V
Reverse clamping voltage
at IPP (see fig. 1)
VC
-20-
V
Capacitance
at VR = 0 V; f = 1 MHz
CD
-55-
pF
ELECTRICAL CHARACTERISTICS VESD08-02V
PARAMETER
TEST CONDITIONS/REMARKS
SYMBOL
MIN.
TYP.
MAX.
UNIT
Protection paths
Number of lines which can be protected
Nchannel
-
-
1
lines
Reverse working voltage
at IRmax.
VRWM
8-
-
V
Reverse current
at VRWM
IR
--
0.1
µA
Reverse breakdown voltage
at IR = 1 mA
VBR
9-
-
V
Reverse clamping voltage
at IPP (see fig. 1)
VC
-30-
V
Capacitance
at VR = 0 V; f = 1 MHz
CD
-35-
pF
ELECTRICAL CHARACTERISTICS VESD12-02V
PARAMETER
TEST CONDITIONS/REMARKS
SYMBOL
MIN.
TYP.
MAX.
UNIT
Protection paths
Number of lines which can be protected
Nchannel
-
-
1
lines
Reverse working voltage
at IRmax.
VRWM
12
-
-
V
Reverse current
at VRWM
IR
--
0.1
µA
Reverse breakdown voltage
at IR = 1 mA
VBR
14
-
-
V
Reverse clamping voltage
at IPP (see fig. 1)
VC
-25-
V
Capacitance
at VR = 0 V; f = 1 MHz
CD
-30-
pF


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