BC857S datasheet(2/6 Pages) SIEMENS

Part #	BC857S

Description	PNP Silicon AF Transistor Array (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage)

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Manufacturer	SIEMENS [Siemens Semiconductor Group]

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2 / 6 page

BC 857S

Semiconductor Group

May-12-1998

2

Electrical Characteristics at

TA=25°C, unless otherwise specified

Parameter

Symbol

Unit

Values

min.

typ.

max.

DC Characteristics per Transistor

V

45

V(BR)CEO

Collector-emitter breakdown voltage

IC = 10 mA, IB = 0

-

Collector-base breakdown voltage

IC = 10 µA, IB = 0

V(BR)CBO

-

50

Collector-emitter breakdown voltage

IC = 10 µA, VBE = 0

V(BR)CES

50

-

V(BR)EBO

5

Emitter-base breakdown voltage

IE = 10 µA, IC = 0

-

Collector cutoff current

VCB = 30 V, IE = 0

ICBO

-

nA

15

µA

Collector cutoff current

VCB = 30 V, IE = 0 , TA = 150 °C

ICBO

-

5

-

DC current gain 1)

IC = 10 µA, VCE = 5 V

IC = 2 mA, VCE = 5 V

-

200

250

290

hFE

-

630

-

mV

-

Collector-emitter saturation voltage1)

IC = 10 mA, IB = 0.5 mA

IC = 100 mA, IB = 5 mA

VCEsat

75

250

300

650

Base-emitter saturation voltage 1)

IC = 10 mA, IB = 0.5 mA

IC = 100 mA, IB = 5 mA

700

850

-

VBEsat

600

-

650

-

750

820

VBE(ON)

Base-emitter voltage 1)

IC = 2 mA, VCE = 5 V

IC = 10 mA, VCE = 5 V

1) Pulse test: t < 300

µs; D < 2%

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