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VFT2080S Datasheet(PDF) 1 Page - Vishay Siliconix |
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VFT2080S Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 4 page ![]() Document Number: 89261 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 18-Nov-10 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1 Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.46 V at IF = 5 A VFT2080S Vishay General Semiconductor New Product FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. MECHANICAL DATA Case: ITO-220AB Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS compliant, and commercial grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum PRIMARY CHARACTERISTICS IF(AV) 20 A VRRM 80 V IFSM 150 A VF at IF = 20 A 0.70 V TJ max. 150 °C TMBS ® ITO-220AB 1 2 3 VFT2080S PIN 1 PIN 2 PIN 3 MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL VFT2080S UNIT Maximum repetitive peak reverse voltage VRRM 80 V Maximum average forward rectified current (fig. 1) IF(AV) 20 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 150 A Voltage rate of change (rated VR) dV/dt 10 000 V/μs Isolation voltage from termal to heatsink t = 1 min VAC 1500 V Operating junction and storage temperature range TJ, TSTG - 55 to + 150 °C |
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