BLF888AS datasheet(5/17 Pages) PHILIPS

Part #	BLF888AS

Description	UHF power LDMOS transistor

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Manufacturer	PHILIPS [NXP Semiconductors]

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BLF888A_BLF888AS

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Product data sheet

Rev. 3 — 30 August 2011

5 of 17

NXP Semiconductors

BLF888A; BLF888AS

UHF power LDMOS transistor

7.

Application information

7.1 Narrowband RF figures

7.1.1 2-Tone

VDS = 50 V; IDq = 1.3 A; measured in a common source

narrowband 860 MHz test circuit.

VDS = 50 V; IDq = 1.3 A; measured in a common source

narrowband 860 MHz test circuit.

Fig 2.

2-Tone power gain and drain efficiency as

function of load power; typical values

Fig 3.

2-Tone power gain and third order

intermodulation distortion as load power;

typical values

PL(AV) (W)

0

500

400

200

300

100

001aan761

16

20

24

Gp

(dB)

ηD

(%)

12

20

40

60

0

Gp

ηD

PL(AV) (W)

0

500

400

200

300

100

001aan762

16

20

24

Gp

(dB)

IMD3

(dBc)

12

-40

-20

0

-60

Gp

IMD3

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