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BLF888AS Datasheet(PDF) 6 Page - NXP Semiconductors

Part # BLF888AS
Description  UHF power LDMOS transistor
Download  17 Pages
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BLF888AS Datasheet(HTML) 6 Page - NXP Semiconductors

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BLF888A_BLF888AS
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 30 August 2011
6 of 17
NXP Semiconductors
BLF888A; BLF888AS
UHF power LDMOS transistor
7.1.2 DVB-T
7.2 Broadband RF figures
7.2.1 DVB-T
VDS = 50 V; IDq = 1.3 A; measured in a common source
narrowband 860 MHz test circuit.
VDS = 50 V; IDq = 1.3 A; measured in a common source
narrowband 860 MHz test circuit.
Fig 4.
DVB-T power gain and intermodulation
distortion shoulder as function of load power;
typical values
Fig 5.
DVB-T peak-to-average ratio and drain
efficiency as function of load power;
typical values
PL(AV) (W)
0
100
200
300
350
250
150
50
001aam582
16
20
24
Gp
(dB)
12
18
22
14
IMDshldr
(dBc)
−40
−20
0
−60
−30
−10
−50
Gp
IMDshldr
PL(AV) (W)
0
100
200
300
350
250
150
50
001aam583
4
8
12
PAR
(dB)
0
6
10
2
ηD
(%)
20
40
60
0
30
50
10
PAR
ηD
PL(AV) = 110 W; VDS = 50 V; IDq = 1.3 A; measured in a
common source broadband test circuit as described in
Section 8.
PL(AV) = 110 W; VDS = 50 V; IDq = 1.3 A; measured in a
common source broadband test circuit as described in
Section 8.
Fig 6.
DVB-T power gain and intermodulation
distortion shoulder as a function of frequency;
typical values
Fig 7.
DVB-T peak-to-average ratio and drain
efficiency as function of frequency;
typical values
f (MHz)
400
900
800
600
700
500
001aam585
16
12
20
24
Gp
(dB)
IMDshldr
(dBc)
8
−30
−40
−20
−10
−50
Gp
IMDshldr
f (MHz)
400
900
800
600
700
500
001aam584
7.5
6.5
8.5
9.5
PAR
(dB)
ηD
(%)
5.5
30
20
40
50
10
ηD
PAR


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