BCX68-25 datasheet(2/4 Pages) SIEMENS

Part #	BCX68-25

Description	NPN Silicon AF Transistors (For general AF applications High collector current)

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Manufacturer	SIEMENS [Siemens Semiconductor Group]

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Semiconductor Group

2

BCX 68

Electrical Characteristics

at TA = 25 ˚C, unless otherwise specified.

V

Collector-emitter breakdown voltage

IC = 30 mA

V(BR)CE0

20

–

Collector-base breakdown voltage

IC = 10

µA

V(BR)CB0

25

–

DC current gain1)

IC = 5 mA, VCE = 10 V

IC = 500 mA, VCE = 1 V

BCX 68

BCX 68-10

BCX 68-16

BCX 68-25

IC = 1 A, VCE = 1 V

hFE

50

85

100

160

60

–

100

160

250

–

375

160

250

375

–

MHz

Transition frequency

IC = 100 mA, VCE = 5 V, f = 20 MHz

fT

–

100

–

Unit

Values

Parameter

Symbol

min.

typ.

max.

DC characteristics

AC characteristics

Emitter-base breakdown voltage

IE = 1

µA

V(BR)EB0

5––

nA

µA

Collector cutoff current

VCB = 25 V

VCB = 25 V, TA = 150 ˚C

ICB0

–

100

µA

Emitter cutoff current

VEB = 5 V

IEB0

––10

V

Collector-emitter saturation voltage1)

IC = 1 A, IB = 100 mA

VCEsat

–

0.5

Base-emitter voltage1)

IC = 5 mA, VCE = 10 V

IC = 1 A, VCE = 1 V

VBE

–

0.6

–

1

1)

Pulse test: t

≤ 300 µs, D = 2 %.

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BCX68-25 Datasheet(PDF) 2 Page - Siemens Semiconductor Group

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