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EPC101-QFN16 Datasheet(PDF) 2 Page - Espros Photonics corp |
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EPC101-QFN16 Datasheet(HTML) 2 Page - Espros Photonics corp |
2 / 9 page epc100 Absolute Maximum Ratings (Notes 1, 2) Recommended Operating Conditions Voltage to any pin except VDD Supply Voltage on 2-wire bus VDD Programming Voltage on 2-wire bus VDD Power Supply Voltage VDD33 Input current at any pin except LED Power consumption with maximum load Storage Temperature Range (TS) Lead Temperature solder, 4 sec. (TL) -0.3V to VDD+0.3 V -0.3V to +8.0V -0.3V to +8.0V -0.3V to +5.5V -6mA to +6 mA 125mW -55°C to +155°C +260°C Operating Voltage on 2-wire bus VDD Programming Voltage on VDD Operating Supply Voltage VDD33 Operating Temperature (TO) Relative Humidity (non-condensing) Min. 4.5 7.0 3.0 -40° +5 Max. 5.5 8.0 3.6 +85 +95 Units V V V °C % Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Recommended operating conditions indic- ate conditions for which the device is intended to be functional, but do not guarantee specific performance limits. For guaranteed specifica - tions and test conditions, see Electrical Characteristics. Note 2: This device is a highly sensitive CMOS ac current amplifier with an ESD rating of JEDEC HBM class 0 (<250V). Handling and as - sembly of this device should only be done at ESD protected workstations. Electrical Characteristics VDD = 5.0 V, -40°C < TA < +85°C, if not otherwise specified Symbol Parameter Conditions/Comments Values Units Min. Typ. Max. VPP Ripple on supply voltage, peak to peak 2-wire interface Vdet Input pulse IPD NST --- 36nA 70 mV 50mV 48nA 150 mV 100mV 72nA 350 mV 200mV 108nA 600 mV IDD_IDLE Current consumption in idle mode 1.4 mA IDD_OP Current consumption in operation mode IPD = 0 mA 2.0 mA Vdet Detection level for 2-wire interface 50 200 mV IMOD Modulation current for 2-wire interface 6.4 8.0 9.8 mA IPDDC DC Photo Diode Current generated by ambient light 2 mA IPD NST Input Pulse Threshold (Photo Current Sensitivity) Photodiode current pulse to generate an output signal (only OUT=1), configurable (refer to the Reference Manual epc10x) 24 108 nA IPD RST Input Pulse Threshold (Photo Current Sensitivity) Photodiode current pulse to generate an output signal (OUT=1 & OUTH=1) 90 nA IPulse Maximum Input Pulse Current If the input current is above this level, the T Relax is un- defined (refer to section 'Other Parameters') 100 µA TPulse LED pulse length 1 10 µs TRelax Relaxation time After a strong current pulse (Ipulse = 100µA) 50 µs IN_Imin Input related noise @ IPDDC =0 7 15 nARMS IN_Imax Input related noise @ IPDDC =IPDDC Max 20 nARMS fclk Reference clock Internal oscillator 32 MHz dfclk Temperature drift of the oscillator 7 % VPUP Power-up Threshold Voltage The voltage at VDD33 when the device starts up 2.4 3 V VIH High level input voltage 0.7 *VDD VDD V VIL Low level input voltage GND 0.3 *VDD V ILEAKD Input leakage current 10 µA VOH Output high voltage @ 4mA sink except pin SCK/LED VDD- 0.5 V VOL Output low voltage @ 4mA source 0.5 V ISCK/LED Source current @ PIN SCK / LED 0.7 1.3 mA VHist Schmitt Trigger Hysteresis 0.1 V RPU Pull-Up Resistor 30 200 kΩ © 2011 ESPROS Photonics Corporation Characteristics subject to change without notice 2 Datasheet epc100 - V2.1 www.espros.ch |
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