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TSD882CKB0 Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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TSD882CKB0 Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
1 / 6 page TSD882 Low Vcesat NPN Transistor 1/6 Version: C11 TO-126 PRODUCT SUMMARY BVCBO 60V BVCEO 30V IC 3A VCE(SAT) 0.5V @ IC=2A, IB=200mA Features ● Low VCE(SAT) 0.3 @ IC=2A, IB=200mA (Typ.) ● Complementary part with TSB772 Ordering Information Part No. Package Packing TSD882CK B0 TO-126 200pcs / Bulk TSD882CK B0G TO-126 200pcs / Bulk Note: “G” denote for Halogen Free Product Structure ● Epitaxial Planar Type ● NPN Silicon Transistor Absolute Maximum Rating (TA=25 oC unless otherwise noted) Parameter Symbol Limit Unit Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 30 V Emitter-Base Voltage VEBO 6 V Collector Current DC IC 3 A Pulse 7 (note) Collector Power Dissipation TA=25 oC PD 1 W TC=25 oC 10 Operating Junction Temperature TJ +150 oC Operating Junction and Storage Temperature Range TSTG - 55 to +150 oC Note: Single pulse, Pw≤350us, Duty≤2% Electrical Specifications (TA=25 oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Collector-Base Breakdown Voltage IC =50uA, IE =0 BVCBO 60 -- -- V Collector-Emitter Breakdown Voltage IC = 1mA, IB =0 BVCEO 30 -- -- V Emitter-Base Breakdown Voltage IE =50uA, IC =0 BVEBO 6 -- -- V Collector Cutoff Current VCB =60V, IE =0 ICBO -- -- 100 nA Emitter Cutoff Current VEB =6V, IC =0 IEBO -- -- 100 nA Collector-Emitter Saturation Voltage IC=2A, IB=200mA *VCE(SAT) -- 0.3 0.5 V Base-Emitter Saturation Voltage IC=2A, IB=200mA *VBE(SAT) -- -- 1.5 V VCE =2V, IC =20A *hFE 1 160 -- -- DC Current Transfer Ratio VCE =2V, IC =500mA *hFE 2 180 -- 390 VCE =2V, IC =1A *hFE 3 150 -- -- Transition Frequency VCE =5V, IC=500mA, f=100MHz fT -- 270 -- MHz Output Capacitance VCB = 10V, f=1MHz Cob -- 16 -- pF * Pulse Test: Pulse Width ≤300uS, Duty Cycle≤2% Pin Definition: 1. Emitter 2. Collector 3. Base |
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