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BFG194 Datasheet(PDF) 1 Page - Siemens Semiconductor Group |
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BFG194 Datasheet(HTML) 1 Page - Siemens Semiconductor Group |
1 / 7 page Semiconductor Group 1 Aug-22-1996 BFG 194 PNP Silicon RF Transistor • For low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20mA to 80mA ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFG 194 BFG194 Q62702-F1321 1 = E 2 = B 3 = E 4 = C SOT-223 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCEO 15 V Collector-base voltage VCBO 20 Emitter-base voltage VEBO 3 Collector current IC 100 mA Base current IB 10 Total power dissipation TS ≤ 75 °C Ptot 1000 mW Junction temperature Tj 150 °C Ambient temperature TA - 65 ... + 150 Storage temperature Tstg - 65 ... + 150 Thermal Resistance Junction - soldering point 1) RthJS ≤ 75 K/W 1) TS is measured on the collector lead at the soldering point to the pcb. |
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