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BFP180W Datasheet(PDF) 1 Page - Siemens Semiconductor Group |
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BFP180W Datasheet(HTML) 1 Page - Siemens Semiconductor Group |
1 / 7 page Semiconductor Group 1 Dec-12-1996 BFP 180W NPN Silicon RF Transistor • For low-power amplifiers in mobile communication systems (pager) at collector currents from 0.2 to 2.5mA fT = 7GHz • F = 2.1dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFP 180W RDs Q62702-F1500 1 = E 2 = C 3 = E 4 = B SOT-343 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCEO 8 V Collector-emitter voltage VCES 10 Collector-base voltage VCBO 10 Emitter-base voltage VEBO 2 Collector current IC 4 mA Base current IB 0.5 Total power dissipation TS ≤ 126 °C Ptot 30 mW Junction temperature Tj 150 °C Ambient temperature TA - 65 ... + 150 Storage temperature Tstg - 65 ... + 150 Thermal Resistance Junction - soldering point 1) RthJS ≤ 785 K/W 1) TS is measured on the collector lead at the soldering point to the pcb. |
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