BFP280W datasheet(1/7 Pages) SIEMENS

Part #	BFP280W

Description	NPN Silicon RF Transistor (For low noise, low-power amplifiers in mobile communication systems)

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Manufacturer	SIEMENS [Siemens Semiconductor Group]

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Semiconductor Group

1

Dec-12-1996

BFP 280W

NPN Silicon RF Transistor

• For low noise, low-power amplifiers in mobile

communication systems (pager, cordless

telephone) at collector currents from 0.2mA to 8mA

•

fT = 7,5GHz

F = 1.5dB at 900MHz

ESD: Electrostatic discharge sensitive device, observe handling precaution!

Type

Marking Ordering Code

Pin Configuration

Package

BFP 280W

REs

Q62702-F1504

1 = E

2 = C

3 = E

4 = B

SOT-343

Maximum Ratings

Parameter

Symbol

Values

Unit

Collector-emitter voltage

VCEO

8

V

Collector-emitter voltage

VCES

10

Collector-base voltage

VCBO

10

Emitter-base voltage

VEBO

2

Collector current

IC

10

mA

Base current

IB

1.2

Total power dissipation

TS ≤ 116 °C

Ptot

80

mW

Junction temperature

Tj

150

°C

Ambient temperature

TA

- 65 ... + 150

Storage temperature

Tstg

- 65 ... + 150

Thermal Resistance

Junction - soldering point

1)

RthJS

≤ 430

K/W

1)

TS is measured on the collector lead at the soldering point to the pcb.

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