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FDN338P Datasheet(HTML) 2 Page - Shenzhen Jin Yu Semiconductor Co., Ltd.

Part No. FDN338P
Description  20 V P-Channel Enhancement Mode MOSFET
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Maker  HTSEMI [Shenzhen Jin Yu Semiconductor Co., Ltd.]
Homepage  http://www.htsemi.com
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FDN338P Datasheet(HTML) 2 Page - Shenzhen Jin Yu Semiconductor Co., Ltd.

   
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ELECTRICAL CHARACTERISTICS
Parameter
Test Condition
Static
Drain-Source Breakdown Voltage
BVDSS
VGS = 0V, ID = -250uA
-20
V
Drain-Source On-State Resistance
R DS(on)
VGS = -4.5V, ID = -1.6A
VGS = -2.5V, ID = -1.3A
116
160
mΩ
Gate Threshold Voltage
VGS(th)
VDS =VGS, ID = -250uA
-0.42
V
Zero Gate Voltage Drain Current
VDS = -16V, V GS = 0V
-1
Gate Body Leakage
IGSS
VGS = ± 8V, VDS = 0V
±100
nA
Forward Transconductance
gfs
VDS = -5V, ID = -2.8A
6.5
S
Dynamic
Total Gate Charge
Qg
5.8
10
Gate-Source Charge
Qgs
0.85
Gate-Drain Charge
Qgd
VDS = -6V, ID
-2.8A
VGS = -4.5V
1.7
nC
Turn-On Delay Time
td(on)
13
25
Turn-On Rise Time
tr
36
60
Turn-Off Delay Time
td(off)
42
70
Turn-Off Fall Time
tf
VDD = -6V, RL=6Ω
ID
-1.A, VGEN = -4.5V
RG = 6
34
60
ns
Input Capacitance
Ciss
415
Output Capacitance
Coss
223
Reverse Transfer Capacitance
Crss
VDS = -6V, VGS = 0V
f = 1.0 MHz
87
pF
Source-Drain Diode
Max. Diode Forward Current
IS
Diode Forward Voltage
VSD
IS = -1.6A, VGS = 0V
-1.2
V
Pulse test: pulse width <= 300us, duty cycle<= 2%
IDSS
uA
-0.8
1)
1)
1)
^
^
Symbol
Min.
Max.
Typ.
Unit
-1.6
A
88
115
-1.5
20V P-Channel Enhancement Mode MOSFET
Date:2011/05
www.htsemi.com
semiconductor
JinYu
FDN338P


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