BFQ76 datasheet(2/4 Pages) SIEMENS

Part #	BFQ76

Description	PNP Silicon RF Transistor (For broadband amplifiers up to 2 GHz at collector currents up to 20 mA.)

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Manufacturer	SIEMENS [Siemens Semiconductor Group]

Direct Link	http://www.siemens.com/

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Electrical Characteristics

at TA = 25 ˚C, unless otherwise specified.

Unit

Values

Parameter

Symbol

min.

typ.

max.

DC Characteristics

V

Collector-emitter breakdown voltage

IC = 1 mA, IB = 0

V(BR)CE0

15

–

µA

Emitter-base cutoff current

VEB = 2 V, IC = 0

IEB0

––10

–

DC current gain

IC = 14 mA, VCE = 10 V

hFE

20

50

–

nA

Collector-base cutoff current

VCB = 10 V, IE = 0

ICB0

––50

AC Characteristics

Power gain

IC = 14 mA, VCE = 10 V, f = 800 MHz,

ZS = ZSopt, ZL = ZLopt

Gpe

–17

–

GHz

Transition frequency

IC = 14 mA, VCE = 10 V, f = 500 MHz

fT

–5–

Output capacitance

VCE = 10 V, VBE = vbe = 0, f = 1 MHz

Cobs

–

0.9

–

dB

Noise figure

IC = 5 mA, VCE = 6 V, f = 10 MHz, ZS = 75

IC = 4 mA, VCE = 10 V, f = 800 MHz, ZS = ZSopt

Ω

F

–

1.8

2.5

–

pF

Collector-base capacitance

VCB = 10 V, VBE = vbe = 0, f = 1 MHz

Ccb

–

0.55

–

Input capacitance

VEB = 0.5 V, IC = ic = 0, f = 1 MHz

Cibo

–

1.2

–

BFQ 76

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