MM1Z4V3 datasheet(2/4 Pages) HTSEMI

Part #	MM1Z4V3

Description	SILICON PLANAR ZENER DIODES

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Manufacturer	HTSEMI [Shenzhen Jin Yu Semiconductor Co., Ltd.]

Direct Link	http://www.htsemi.com

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Characteristics at Ta = 25 OC

Zener Voltage Range

1)

Dynamic Impedance

2)

Reverse Leakage Current

lZT for

VZT

ZZT (Max.)

at IZ

IR (Max.)

at VR

Type

Marking

Code

Vznom

V

mA

V

Ω

mA

μA

V

MM1Z2V0

4A

2.0

5

1.8...2.15

100

5

120

0.5

MM1Z2V2

4B

2.2

5

2.08...2.33

100

5

120

0.7

MM1Z2V4

4C

2.4

5

2.28...2.56

100

5

120

1

MM1Z2V7

4D

2.7

5

2.5...2.9

110

5

120

1

MM1Z3V0

4E

3.0

5

2.8...3.2

120

5

50

1

MM1Z3V3

4F

3.3

5

3.1...3.5

130

5

20

1

MM1Z3V6

4H

3.6

5

3.4...3.8

130

5

10

1

MM1Z3V9

4J

3.9

5

3.7...4.1

130

5

1

MM1Z4V3

4K

4.3

5

4...4.6

130

5

1

MM1Z4V7

4M

4.7

5

4.4...5

130

5

2

1

MM1Z5V1

4N

5.1

5

4.8...5.4

130

5

2

1.5

MM1Z5V6

4P

5.6

5

5.2...6

80

5

1

2.5

MM1Z6V2

4R

6.2

5

5.8...6.6

50

5

1

3

MM1Z6V8

4X

6.8

5

6.4...7.2

30

5

0.5

3.5

MM1Z7V5

4Y

7.5

5

7...7.9

30

5

0.5

4

MM1Z8V2

4Z

8.2

5

7.7...8.7

30

5

0.5

5

MM1Z9V1

5A

9.1

5

8.5...9.6

30

5

0.5

6

MM1Z10

5B

10

5

9.4...10.6

30

5

0.1

7

MM1Z11

5C

11

5

10.4...11.6

30

5

0.1

8

MM1Z12

5D

12

5

11.4...12.7

35

5

0.1

9

MM1Z13

5E

13

5

12.4...14.1

35

5

0.1

10

MM1Z15

5F

15

5

13.8...15.6

40

5

0.1

11

MM1Z16

5H

16

5

15.3...17.1

40

5

0.1

12

MM1Z18

5J

18

5

16.8...19.1

45

5

0.1

13

MM1Z20

5K

20

5

18.8...21.2

50

5

0.1

15

MM1Z22

5M

22

5

20.8...23.3

55

5

0.1

17

MM1Z24

5N

24

5

22.8...25.6

60

5

0.1

19

MM1Z27

5P

27

5

25.1...28.9

70

2

0.1

21

MM1Z30

5R

30

5

28...32

80

2

0.1

23

MM1Z33

5X

33

5

31...35

80

2

0.1

25

MM1Z36

5Y

36

5

34...38

90

2

0.1

27

MM1Z39

5Z

39

2.5

37...41

100

2

30

MM1Z43

6A

43

2.5

40...46

130

2

33

MM1Z47

6B

47

2.5

44...50

150

2

36

MM1Z51

6C

51

2.5

48...54

180

2

1

39

MM1Z56

6D

56

2.5

52...60

180

2

1

43

MM1Z62

6E

62

2.5

58...66

200

2

0.2

47

MM1Z68

6F

68

2.5

64...72

250

2

0.2

52

MM1Z75

6H

75

2.5

70...79

300

2

0.2

57

1) V

Z is tested with pulses (20 ms).

2) Z

ZT is measured at IZ by given a very small A.C. current signal.

MM1Z2V0~MM1Z75

２

Ｄａｔｅ：２０１１／０５

www.htsemi.com

semiconductor

JinYu

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