MMBTA92 datasheet(1/2 Pages) HTSEMI

Part #	MMBTA92

Description	TRANSISTOR(PNP)

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Manufacturer	HTSEMI [Shenzhen Jin Yu Semiconductor Co., Ltd.]

Direct Link	http://www.htsemi.com

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TRANSISTOR(PNP)

FEATURES

High voltage transistor

MARKING:2D

MAXIMUM RATINGS (TA=25

℃ unless otherwise noted)

Symbol

Parameter

Value

Units

VCBO

Collector-Base Voltage

-300

V

VCEO

Collector-Emitter Voltage

-300

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current -Continuous

-300

mA

PC

Collector Power Dissipation

300

mW

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature

-55-150

℃

RӨJA

Thermal Resistance, junction to Ambient

410

℃/mW

ELECTRICAL CHARACTERISTICS (Tamb=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

IC= -100μA, IE=0

-300

V

Collector-emitter breakdown voltage

V(BR)CEO

IC= -1mA, IB=0

-300

V

Emitter-base breakdown voltage

V(BR)EBO

IE= -100μA, IC=0

-5

V

Collector cut-off current

ICBO

VCB=-200V, IE=0

-0.25

μA

Emitter cut-off current

IEBO

VEB= -5V, IC=0

-0.1

μA

hFE(1)

VCE= -10V, IC= -1mA

60

hFE(2)

VCE= -10V, IC=-10mA

100

200

DC current gain

hFE(3)

VCE= -10V, IC=-30mA

60

Collector-emitter saturation voltage

VCE(sat)

IC=-20mA, IB= -2mA

-0.2

V

Base-emitter saturation voltage

VBE(sat)

IC= -20mA, IB= -2mA

-0.9

V

Transition frequency

fT

VCE=-20V, IC= -10mA

f=30MHz

50

MHz

SOT-23

1. BASE

2. EMITTER

3. COLLECTOR

MMBTA92

１　

Ｄａｔｅ：２０１１／０５

www.htsemi.com

semiconductor

JinYu

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MMBTA92 Datasheet(PDF) 1 Page - Shenzhen Jin Yu Semiconductor Co., Ltd.

MMBTA92 Datasheet(HTML) 1 Page - Shenzhen Jin Yu Semiconductor Co., Ltd.

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