S9013 datasheet(1/2 Pages) HTSEMI

Part #	S9013

Description	TRANSISTOR(NPN)

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Manufacturer	HTSEMI [Shenzhen Jin Yu Semiconductor Co., Ltd.]

Direct Link	http://www.htsemi.com

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TRANSISTOR(NPN)

FEATURES

Complementary to S9012

Excellent hFE linearity

MARKING: J3

MAXIMUM RATINGS (

TA=25

℃ unless otherwise noted)

Symbol

Parameter

Value

Units

VCBO

Collector-Base Voltage

40

V

VCEO

Collector-Emitter Voltage

25

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current -Continuous

500

mA

PC

Collector Power Dissipation

300

mW

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature

-55-150

℃

ELECTRICAL CHARACTERISTICS (Tamb=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

IC= 100μA, IE=0

40

V

Collector-emitter breakdown voltage

V(BR)CEO

IC= 0.1mA, IB=0

25

V

Emitter-base breakdown voltage

V(BR)EBO

IE=100μA, IC=0

5

V

Collector cut-off current

ICBO

VCB=40V, IE=0

0.1

μA

Collector cut-off current

ICEO

VCE=20V, IB=0

0.1

μA

Emitter cut-off current

IEBO

VEB= 5V, IC=0

0.1

μA

hFE(1)

VCE=1V, IC= 50mA

120

400

DC current gain

hFE(2)

VCE=1V, IC=500mA

40

Collector-emitter saturation voltage

VCE(sat)

IC=500mA, IB= 50mA

0.6

V

Base-emitter saturation voltage

VBE(sat)

IC=500mA, IB= 50mA

1.2

V

Transition frequency

fT

VCE=6V, IC= 20mA

f=30MHz

150

MHz

CLASSIFICATION OF

hFE(1)

Rank

L

H

J

Range

120-200

200-350

300-400

SOT-23

1. BASE

2. EMITTER

3. COLLECTOR

S901 3

１　

Ｄａｔｅ：２０１１／０５

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JinYu

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