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SMG1330N Datasheet(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH |
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SMG1330N Datasheet(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH |
2 / 2 page SMG1330N 2.0A , 30V , RDS(ON) 58 mΩ Ω Ω Ω N-Channel Enhancement Mode MOSFET Elektronische Bauelemente 29-Aug-2011 Rev. A Page 2 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Gate-Threshold Voltage VGS(th) 1 - - V VDS=VGS, ID=250uA Gate-Body Leakage IGSS - - ±100 nA VDS=0, VGS= ±20V Zero Gate Voltage Drain Current IDSS - - 1 µA VDS=24V, VGS=0 - - 10 VDS=24V, VGS=0, TJ=55°C On-State Drain Current 1 ID(on) 10 - - A VDS =5V, VGS=10V Drain-Source On-Resistance 1 RDS(ON) - - 58 m VGS=10V, ID=2A - - 82 VGS=4.5V, ID=1.7A Forward Transconductance 1 gfs - 11.3 - S VDS=10V, ID=2A Diode Forward Voltage VSD - 0.75 - V IS=1.6A, VGS=0 Dynamic 2 Total Gate Charge Qg - 7.5 - nC VDS=10V, VGS=5V, ID=2A Gate-Source Charge Qgs - 0.6 - Gate-Drain Charge Qgd - 1 - Turn-on Delay Time Td(on) - 8 - nS VDD=10V, VGEN=4.5V, RL=15 , ID=1A Rise Time Tr - 24 - Turn-off Delay Time Td(off) - 35 - Fall Time Tf - 10 - Notes: 1 Pulse test:PW ≦ 300 µs duty cycle ≦ 2%. 2 Guaranteed by design, not subject to production testing. |
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