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BAT43 Datasheet(PDF) 2 Page - Vishay Siliconix |
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BAT43 Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 4 page www.vishay.com 2 Document Number 85660 Rev. 1.6, 05-Aug-10 BAT42, BAT43 Vishay Semiconductors For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Thermal Characteristics Tamb = 25 °C, unless otherwise specified 1) Valid provided that leads at a distance of 4 mm from case are kept at ambient temperature Electrical Characteristics Tamb = 25 °C, unless otherwise specified 1) Pulse test t p < 300 µs, tp/T < 0.02 Typical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Test condition Symbol Value Unit Thermal resistance junction to ambient air RthJA 3001) K/W Junction temperature Tj 125 °C Ambient operating temperature range Tamb - 65 to + 125 °C Storage temperature range Tstg - 65 to +150 °C Parameter Test condition Part Symbol Min Typ. Max Unit Reverse breakdown voltage IR = 100 µA (pulsed) V(BR) 30 V Leakage current1) VR = 25 V IR 0.5 µA VR = 25 V, Tj = 100 °C IR 100 µA Forward voltage1) IF = 200 mA VF 1000 mV IF = 10 mA BAT42 VF 400 mV IF = 50 mA BAT42 VF 650 mV IF = 2 mA BAT43 VF 260 330 mV IF = 15 mA BAT43 VF 450 mV Diode capacitance VR = 1 V, f = 1 MHz CD 7pF Reverse recovery time IF = 10 mA, IR = 10 mA, iR = 1 mA, RL = 100 Ω trr 5ns Rectification efficieny RL = 15 kΩ, CL = 300 pF, f = 45 MHz, VRF = 2 V ηv 80 % Figure 1. Admissible Power Dissipation vs. Ambient Temperature 200 18442 T amb - Ambient Temperature (°C) 250 200 150 100 50 50 100 150 0 0 Figure 2. Typical Forward Characteristics 18443 1200 1000 800 600 400 200 0 1000 100 10 1 0.1 0.01 VF - Instantaneous Forward Voltage (mV) 25 °C 125 °C - 40 °C |
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