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AN11007 Datasheet(PDF) 10 Page - NXP Semiconductors |
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AN11007 Datasheet(HTML) 10 Page - NXP Semiconductors |
10 / 23 page NXP Semiconductors AN11007 5-6 GHz LNA AN11007 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Application note Rev. 1 — 04 January 2011 10 of 23 Table 2. Bill of materials Designator Description Size Value Type Note Q1 BFU730F 2X2 mm NXP Semiconductors HBT PCB 20X35 mm C1,C7 Capacitor 0402 3.9 pF MurataGRM1555 input/output match C2,C6 Capacitor 0402 0.75 pF MurataGRM1555 input/output match C3 Capacitor 0402 15 nF MurataGRM1555 C4 Capacitor 0402 1.5 pF MurataGRM1555 C5 Capacitor 0402 1.5 pF MurataGRM1555 L1,L4 Inductor 0402 1.5 nH Murata LQP15 input/output match L2 Inductor 0402 9.1 nH Murata LQW15 input match L3 Inductor 0402 5.1 nH Murata LQW15 output match R1 Resistor 0402 37 K Bias Setting R2 Resistor 0402 100 Ohm Bias Setting Hfe and Temp spread cancellation R3 Resistor 0402 10 Ohm Stability R4 Resistor 0402 0 Ohm NA X1,X2 SMA RF connector - Johnson, End launch SMA 142-0701-841 RF input/ RF output X3 DC header - Molex, PCB header, Right Angle, 1 row, 3 way 90121- 0763 Bias connector 4.3 PCB layout. A good PCB Layout is an essential part of an RF circuit design. The EVB of the BFU730 can serve as a guideline for laying out a board using either the BFU730 or one of the other SiGe.C HBTs in the SOT343F package. Use controlled impedance lines for all high frequency inputs and outputs. Bypass VCC with decoupling capacitors, preferable located as close as possible to the device. For long bias lines it may be necessary to add decoupling capacitors along the line further away from the device. Proper grounding the emitters is also essential for the performance. Either connect the emitters directly to the ground plane ore through vias, or do both. The material that has been used for the EVB is FR4 using the stack shown in Fig 7. |
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