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C67079-A1041-A6 Datasheet(PDF) 3 Page - Siemens Semiconductor Group |
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C67079-A1041-A6 Datasheet(HTML) 3 Page - Siemens Semiconductor Group |
3 / 6 page Semiconductor Group 3 12.96 BRT 11, BRT 12, BRT 13 Characteristics at Tj = 25 °C, unless otherwise specified. Input Circuit Parameter Values Symbol Unit typ. max. min. Forward Voltage, IF = 10 mA VF 1.1 V 1.35 - - - 10 IR Reverse current, VR = 6 V µA Thermal resistance 2) junction - ambient RthJA - - 750 K/W Output Circuit Parameter Symbol Values Unit min. typ. max. Critical rate of rise of off-state voltage VD = 0.67 VDRM, Tj = 25 °C VD = 0.67 VDRM, Tj = 80 °C dv/dtcr - - kV/µs - - 10 5 10 5 dv/dtcrq - - - - Critical rate of rise of voltage at current communication VD = 0.67 VDRM, Tj = 25 °C, di/dtcrq ≤ 15 A/ms VD = 0.67 VDRM, Tj = 80 °C, di/dtcrq ≤ 15 A/ms Critical rate of rise of on-state current di/dtcr - 8 A/µs - Pulse current tp ≤ 5 µs, f = 100 , ditp/dt ≤ 8 A/µs Itp - A 2 - On-state voltage, IT = 300 mA V VT - 2.3 - ID - Off-state current TC = 100 °C, VDRM = VDRM 0.5 100 µA Holding current, VD = 10 V IH 500 80 - Thermal resistance 2) junction - ambient RthJA - - 125 K/W Tj commutation tp ≤ 5 µs, f = 100 Hz, ditp/dt ≤ 8 A/µs |
Similar Part No. - C67079-A1041-A6 |
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