New Product

VB40M120C

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Vishay General Semiconductor

Revision: 11-Jan-12

3

Document Number: 89468

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode

Fig. 4 - Typical Reverse Characteristics Per Diode

Fig. 5 - Typical Junction Capacitance Per Diode

Fig. 6 - Typical Transient Thermal Impedance Per Diode

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

0.1

1

10

100

0

0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2

Instantaneous Forward Voltage (V)

T

T

T

T

0.0001

0.001

0.01

0.1

1

10

100

20

40

60

80

100

Percent of Rated Peak Reverse Voltage (%)

T

T

T

T

10

100

1000

10 000

0.1

1

10

100

Reverse Voltage (V)

T

f = 1.0 MHz

V

10

1

0.1

0.01

0.1

1

10

100

t - Pulse Duration (s)

Junction to Case

0.380 (9.65)

0.411 (10.45)

0.320 (8.13)

0.360 (9.14)

0.591(15.00)

0.624 (15.85)

1

2

0.245 (6.22)

MIN

K

K

0.160 (4.06)

0.190 (4.83)

0.045 (1.14)

0.055 (1.40)

0.014 (0.36)

0.021 (0.53)

0.110 (2.79)

0.140 (3.56)

0.110 (2.79)

0.090 (2.29)

0.047 (1.19)

0.055 (1.40)

0-0.01 (0-0.254)

0.027 (0.686)

0.037 (0.940)

0.105 (2.67)

0.095 (2.41)

0.205 (5.20)

0.195 (4.95)

TO-263AB

0.08

(2.032)

0.42

(10.66)

0.670 (17.02)

0.591 (15.00)

0.15

(3.81)

0.33

(8.38)

Mounting Pad Layout

K-HEATSINK

PIN 2

PIN 1

MIN.

MIN.

MIN.

MIN.

0.095 (2.41)

0.105 (2.67)