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TS1002IM8TP Datasheet(PDF) 3 Page - Touchstone Semiconductor Inc |
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TS1002IM8TP Datasheet(HTML) 3 Page - Touchstone Semiconductor Inc |
3 / 13 page TS1002/TS1004 TS1002_4DS r1p0 Page 3 RTFDS ELECTRICAL CHARACTERISTICS VDD = +0.8V, VSS = 0V, VINCM = VSS; RL = 100kΩ to (VDD-VSS)/2; TA = -40°C to +85°C, unless otherwise noted. Typical values are at TA = +25°C. See Note 1 Parameters Symbol Conditions Min Typ Max Units Supply Voltage Range VDD-VSS 0.65 0.8 2.5 V Supply Current ISY TS1002; RL = Open circuit TA = 25 °C 1.2 1.6 µA -40 °C ≤ TA ≤ 85°C 2 TS1004; RL = Open circuit TA = 25 °C 2.4 3.2 µA -40 °C ≤ TA ≤ 85°C 4 Input Offset Voltage VOS VIN = VSS or VDD TA = 25 °C 0.5 3 mV -40 °C ≤ TA ≤ 85°C 5 Input Offset Voltage Drift TCVOS 10 µV/°C Input Bias Current IIN+, IIN- VIN+, VIN- = (VDD - VSS)/2 TA = 25 °C 0.025 nA -40 °C ≤ TA ≤ 85°C 20 Input Offset Current IOS Specified as IIN+ - IIN- VIN+, VIN- = (VDD - VSS)/2 TA = 25 °C 0.01 nA -40 °C ≤ TA ≤ 85°C 2 Input Voltage Range IVR Guaranteed by Input Offset Voltage Test VSS VDD V Common-Mode Rejection Ratio CMRR 0V ≤ V IN(CM) ≤ 0.4V 50 74 dB Power Supply Rejection Ratio PSRR 0.65V ≤ (V DD - VSS) ≤ 2.5V 50 74 dB Output Voltage High VOH Specified as VDD - VOUT, RL = 100kΩ to VSS TA = 25 °C 1.2 2 mV -40 °C ≤ TA ≤ 85°C 2.5 Specified as VDD - VOUT, RL = 10kΩ to VSS TA = 25 °C 10 16 -40 °C ≤ TA ≤ 85°C 20 Output Voltage Low VOL Specified as VOUT - VSS, RL = 100kΩ to VDD TA = 25 °C 0.4 0.6 mV -40 °C ≤ TA ≤ 85°C 1 Specified as VOUT - VSS, RL = 10kΩ to VDD TA = 25 °C 5 7 -40 °C ≤ TA ≤ 85°C 10 Short-circuit Current ISC+ VOUT = VSS TA = 25 °C 0.5 1.5 mA -40 °C ≤ TA ≤ 85°C 0.3 ISC- VOUT = VDD TA = 25 °C 4.5 11 -40 °C ≤ TA ≤ 85°C 3 Open-loop Voltage Gain AVOL VSS+50mV ≤ VOUT ≤ VDD-50mV TA = 25 °C 90 104 dB -40 °C ≤ TA ≤ 85°C 85 Gain-Bandwidth Product GBWP RL = 100kΩ to VSS, CL = 20pF 4 kHz Phase Margin φ M Unity-gain Crossover, RL = 100kΩ to VSS, CL = 20pF 70 degrees Slew Rate SR RL = 100kΩ to VSS, AVCL = +1V/V 1.5 V/ms Full-power Bandwidth FPBW FPBW = SR/(π • V OUT,PP); VOUT,PP = 0.7VPP 680 Hz Input Voltage Noise Density en f = 1kHz 0.6 µV/ Input Current Noise Density in f = 1kHz 10 pA/ Note 1: All specifications are 100% tested at TA = +25°C. Specification limits over temperature (TA = TMIN to TMAX) are guaranteed by device characterization, not production tested. |
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