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TSZ02201-0J3J0AJ00140-1-2

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ROHM Co., Ltd. All rights reserved.

3/18

02.MAR.2012 Rev.001

TSZ22111･15･001

BD9132MUV

Datasheet

●Absolute Maximum Ratings(Ta=25℃)

Parameter

Symbol

Limits

Unit

-0.3 to +7 *

1

V

-0.3 to +7 *

1

V

BST Voltage

-0.3 to +13

V

BST_SW Voltage

-0.3 to +7

V

EN Voltage

VEN

-0.3 to +7

V

SW,ITH Voltage

VSW,

VITH

-0.3 to +7

V

Power Dissipation 1

Pd1

0.34 *

2

W

Power Dissipation 2

Pd2

0.70 *

3

W

Power Dissipation 3

Pd3

1.21 *

4

W

Power Dissipation 4

Pd4

3.56 *

5

W

Operating temperature range

Topr

-40 to +105

℃

Storage temperature range

Tstg

-55 to +150

℃

Maximum junction temperature

Tj

+150

℃

＊1

Pd should not be exceeded.

＊2

IC only

＊3

1-layer. mounted on a 74.2mm×74.2mm×1.6mm glass-epoxy board, occupied area by copper foil : 10.29mm

2

＊4

4-layer. mounted on a 74.2mm×74.2mm×1.6mm glass-epoxy board, occupied area by copper foil : 10.29mm

＊5

4-layer. mounted on a 74.2mm×74.2mm×1.6mm glass-epoxy board, occupied area by copper foil : 5505mm

●Operating Ratings (Ta=-40 to +105℃)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Power Supply Voltage

2.7

3.3

5.5

V

2.7

3.3

5.5

V

EN Voltage

VEN

0

-

5.5

V

Output voltage Setting Range

0.8

-

3.3*

6

V

SW average output current

-

-

3.0*

7

A

●Electrical Characteristics

Parameter

Symbol

Min.

Typ.

Max.

Unit

Conditions

Standby current

-

0

10

μA

EN=GND

Active current

-

250

500

μA

EN Low voltage

-

GND

0.8

V

Standby mode

EN High voltage

2.0

Vcc

-

V

Active mode

EN input current

-

1

10

μA

Oscillation frequency

0.8

1

1.2

MHz

High side FET ON resistance

-

82

115

mΩ

Low side FET ON resistance

-

70

98

mΩ

ADJ Voltage

0.788

0.800

0.812

V

10

18

-

μA

10

18

-

μA

UVLO threshold voltage

2.400

2.500

2.600

V

UVLO release voltage

2.425

2.550

2.700

V

Soft start time

2.5

5

10

ms

Timer latch time

0.5

1

2

ms

Output Short circuit

Threshold Voltage

-

0.40

0.56

V