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Q67050-T7 Datasheet(PDF) 3 Page - Siemens Semiconductor Group |
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Q67050-T7 Datasheet(HTML) 3 Page - Siemens Semiconductor Group |
3 / 4 page Semiconductor Group 3 May-30-1996 BSS 169 Preliminary data Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Dynamic Characteristics Transconductance VDS≥ 2 * ID * RDS(on)max, ID = 0.12 A gfs 0.1 0.15 - S Input capacitance VGS = -4.5 V, VDS = 25 V, f = 1 MHz Ciss - 70 100 pF Output capacitance VGS = -4.5 V, VDS = 25 V, f = 1 MHz Coss - 11 20 Reverse transfer capacitance VGS = -4.5 V, VDS = 25 V, f = 1 MHz Crss - 4 7 Turn-on delay time VDD = 30 V, VGS = -5... + 5 V, ID = 0.27 A RGS = 50 Ω td(on) - 7 11 ns Rise time VDD = 30 V, VGS = -5... + 5 V, ID = 0.27 A RGS = 50 Ω tr - 10 15 Turn-off delay time VDD = 30 V, VGS = -5... + 5 V, ID = 0.27 A RGS = 50 Ω td(off) - 13 17 Fall time VDD = 30 V, VGS = -5... + 5 V, ID = 0.27 A RGS = 50 Ω tf - 13 17 |
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