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BTS110 Datasheet(PDF) 1 Page - Siemens Semiconductor Group |
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BTS110 Datasheet(HTML) 1 Page - Siemens Semiconductor Group |
1 / 9 page Semiconductor Group 1 04.97 TEMPFET® BTS 110 1 2 3 Features q N channel q Enhancement mode q Temperature sensor with thyristor characteristic q The drain pin is electrically shorted to the tab Pin 1 2 3 GD S Type V DS I D R DS(on) Package Ordering Code BTS 110 100 V 10 A 0.2 Ω TO-220AB C67078-A5008-A2 Maximum Ratings Parameter Symbol Values Unit Drain-source voltage V DS 100 V Drain-gate voltage, R GS = 20 kΩ V DGR 100 Gate-source voltage V GS ± 20 Continuous drain current, T C = 25 °C I D 10 A ISO drain current T C = 85 °C, VGS = 10 V, VDS = 0.5 V I D-ISO 1.75 Pulsed drain current, T C = 25 °C I D puls 40 Short circuit current, T j = – 55 ... + 150 °C I SC 37 Short circuit dissipation, T j = – 55 ... + 150 °C P SCmax 500 W Power dissipation P tot 40 Operating and storage temperature range T j, Tstg – 55 ... + 150 °C DIN humidity category, DIN 40 040 – E – IEC climatic category, DIN IEC 68-1 – 55/150/56 Thermal resistance Chip-case Chip-ambient R th JC R th JA ≤ 3.1 ≤ 75 K/W |
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