Data Sheet

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© 2011 ROHM Co., Ltd. All rights reserved.

10V Drive Nch MOSFET

R5019ANJ



Structure



Dimensions (Unit : mm)

Silicon N-channel MOSFET



Features

1) Low on-resistance.

2) High-speed switching.

3) Wide SOA.

4) Drive circuits can be simple.

5) Parallel use is easy.



Application

Switching



Packaging specifications



Inner circuit

Package

Taping

Code

TL

Basic ordering unit (pieces)

1000

R5019ANJ





Absolute maximum ratings (Ta = 25

C)

Symbol

Limits

Unit

Drain-source voltage

500

V

Gate-source voltage

30

V

Continuous

19

A

76

A

Continuous

19

A

76

A

Avalanche current

9.5

A

Avalanche energy

24.3

mJ

Power dissipation

100

W

Channel temperature

150

C

Range of storage temperature

55 to 150

C

*1 Pw

10s, Duty cycle1%

*2 L 500

*3 Limited only by maximum temperature allowed.



Thermal resistance

Symbol

Limits

Unit

Channel to Case

1.25

C / W

Pulsed

Parameter

Type

Source current

(Body Diode)

Drain current

Parameter

Pulsed

(1) Gate

(2) Drain

(3) Source

1 BODY DIODE

*4

*2

*2

*3

*1

*3

*1

LPTS

10.1

4.5

0.78

2.54

5.08

1.24

0.4

1.3

2.7

(1)

(2)

(3)

(1)

(3)

(2)

∗1

(1) Gate

(2) Drain

(3) Source

1/5

2011.10 - Rev.A