MAXIMUM RATINGS: (TA=25°C)

SYMBOL

UNITS

Collector-Base Voltage

VCBO

30

V

Collector-Emitter Voltage (RBE≤50Ω)

VCER

30

V

Collector-Emitter Voltage

VCEO

15

V

Emitter-Base Voltage

VEBO

2.5

V

Collector Current

IC

25

mA

Peak Collector Current (f ≥ 1 MHz)

ICM

50

mA

Power Dissipation

PD

200

mW

Power Dissipation (TC=25°C)

PD

300

mW

Operating and Storage

Junction Temperature

TJ,Tstg

-65 to +200

°C

Thermal Resistance

ΘJA

875

°C/W

Thermal Resistance

ΘJC

583

°C/W

ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)

BFX89

BFY90

SYMBOL TEST CONDITIONS

MIN TYP MAX

MIN TYP MAX

UNITS

ICBO

VCB=15V

10

10

nA

BVCBO

IC=10µA

30

30

V

BVCER

IC=1.0mA, RBE=50Ω

30

30

V

BVCEO

IC=1.0mA

15

15

V

BVEBO

IE=10µA

2.5

2.5

V

hFE

VCE=1.0V, IC=2.0mA

20

150

25

150

hFE

VCE=1.0V, IC=25mA

20

125

20

125

fT

VCE=5.0V, IC=2.0mA, f=500MHz

1.0

1.0

1.1

GHz

fT

VCE=5.0V, IC=25mA, f=500MHz

1.2

1.3

1.4

GHz

Cob

VCB=10V, IE=0, f=1.0MHz

1.7

1.5

pF

Cre

VCE=5.0V, IC=2.0mA, f=1.0MHz

0.6

0.6

0.8

pF

BFX89

BFY90

NPN SILICON

RF TRANSISTORS

JEDEC TO-72 CASE

Central

Semiconductor Corp.

TM

R3 (20-March 2006)

DESCRIPTION:

The CENTRAL SEMICONDUCTOR BFX89 and

BFY90 are Silicon NPN Epitaxial Planar Transistors

mounted

in

a

hermetically

sealed

package

designed for VHF/UHF amplifier, oscillator, and

converter applications.

MARKING CODE: FULL PART NUMBER