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BTS121A Datasheet(PDF) 7 Page - Siemens Semiconductor Group |
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BTS121A Datasheet(HTML) 7 Page - Siemens Semiconductor Group |
7 / 9 page Semiconductor Group 7 Continuous drain current I D = f (TC) Parameter: V GS ≥ 10 V Typ. gate-source leakage current I GSS = f (TC) Parameter: V GS = 20 V, VDS = 0 Forward characteristics of reverse diode I F = f (VSD) Parameter :T j, tp = 80 µs (spread) Typ. capacitances C = f (V DS) Parameter: V GS = 0, f = 1 MHz BTS 121A |
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