Electronic Components Datasheet Search |
|
BTS130 Datasheet(PDF) 2 Page - Siemens Semiconductor Group |
|
BTS130 Datasheet(HTML) 2 Page - Siemens Semiconductor Group |
2 / 9 page Semiconductor Group 2 Electrical Characteristics at T j = 25 °C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain-source breakdown voltage V GS = 0, ID = 0.25 mA V (BR)DSS 50 – – V Gate threshold voltage V GS = VDS, ID = 1 mA V GS(th) 2.5 3.0 3.5 Zero gate voltage drain current V GS = 0 V, VDS = 50 V T j = 25 °C T j = 125 °C I DSS – – 1 100 10 300 µA Gate-source leakage current V GS = 20 V, VDS = 0 T j = 25 °C T j = 150 °C I GSS – – 10 2 100 4 nA µA Drain-source on-state resistance V GS = 10 V, ID =17 A R DS(on) – 0.04 0.05 Ω Dynamic Characteristics Forward transconductance V DS ≥ 2 × ID × RDS(on)max, ID = 17 A g fs 8.0 13.0 18.0 S Input capacitance V GS = 0, VDS = 25 V, f = 1 MHz C iss 700 940 1250 pF Output capacitance V GS = 0, VDS = 25 V, f = 1 MHz C oss – 500 750 Reverse transfer capacitance V GS = 0, VDS = 25 V, f = 1 MHz C rss – 180 270 Turn-on time t on, (ton = td(on) + tr) V CC = 30 V, VGS = 10 V, ID = 3 A, RGS = 50 Ω t d(on) –25 40 ns t r –60 90 Turn-off time t off, (toff = td(off) + tf) V CC = 30 V, VGS = 10 V, ID = 3 A, RGS = 50 Ω t d(off) – 100 130 t f –75 95 BTS 130 |
Similar Part No. - BTS130 |
|
Similar Description - BTS130 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.NET |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |