MAXIMUM RATINGS: (TA=25°C)

SYMBOL

UNITS

Collector-Emitter Voltage

VCEO

60

V

Collector-Base Voltage

VCBO

60

V

Emitter-Base Voltage

VEBO

5.0

V

Continuous Collector Current

IC

50

mA

Power Dissipation (One Die)

PD

500

mW

Power Dissipation (Both Die)

PD

600

mW

Operating and Storage Junction Temperature

TJ, Tstg

-65 to +200

°C

ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

ICBO

VCB=50V

10

nA

IEBO

VBE=4.0V

20

nA

BVCEO

IC=10mA

60

V

BVCBO

IC=10μA

60

V

BVEBO

IE=10μA

5.0

V

VCE(SAT)

IC=100μA, IB=10μA

0.20

V

VCE(SAT)

IC=1.0mA, IB=100μA

0.25

V

VBE(SAT)

IC=100μA, IB=10μA

0.70

V

VBE(SAT)

IC=1.0mA, IB=100μA

0.80

V

VBE(ON)

VCE=5.0V, IC=100μA

0.70

V

hFE

VCE=5.0V, IC=10μA

100

hFE

VCE=5.0V, IC=100μA

150

450

hFE

VCE=5.0V, IC=500μA

150

450

hFE

VCE=5.0V, IC=1.0mA

150

450

hFE

VCE=5.0V, IC=10mA

125

fT

VCE=5.0V, IC=500μA, f=30MHz

30

MHz

fT

VCE=5.0V, IC=1.0mA, f=100MHz

100

500

MHz

Cob

VCB=5.0V, IE=0, f=100kHz

4.0

pF

Cib

VBE=0.5V, IC=0, f=100kHz

8.0

pF

2N3810

2N3810A

DUAL PNP

SILICON TRANSISTOR

TO-78 CASE

Central

Semiconductor Corp.

TM

R0 (6-November 2008)

DESCRIPTION:

The CENTRAL SEMICONDUCTOR 2N3810 and

2N3810A types are dual PNP silicon transistors

manufactured by the epitaxil planar process

utilizing two individual chips mounted in a

hermetically sealed metal case designed for

differential amplifier applications.

MARKING: FULL PART NUMBER