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BUP307D Datasheet(PDF) 1 Page - Siemens Semiconductor Group

Part # BUP307D
Description  IGBT With Antiparallel Diode (Low forward voltage drop High switching speed Low tail current Latch-up free Including fast free-wheel diode)
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Manufacturer  SIEMENS [Siemens Semiconductor Group]
Direct Link  http://www.siemens.com/
Logo SIEMENS - Siemens Semiconductor Group

BUP307D Datasheet(HTML) 1 Page - Siemens Semiconductor Group

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Semiconductor Group
1
Dec-02-1996
BUP 307D
IGBT With Antiparallel Diode
Preliminary data
• Low forward voltage drop
• High switching speed
• Low tail current
• Latch-up free
• Including fast free-wheel diode
Pin 1
Pin 2
Pin 3
G
C
E
Type
VCE
IC
Package
Ordering Code
BUP 307D
1200V 35A
TO-218 AB
Q67040-A4221-A2
Maximum Ratings
Parameter
Symbol
Values
Unit
Collector-emitter voltage
VCE
1200
V
Collector-gate voltage
RGE = 20 kΩ
VCGR
1200
Gate-emitter voltage
VGE
± 20
DC collector current
TC = 25 °C
TC = 90 °C
IC
23
35
A
Pulsed collector current,
tp = 1 ms
TC = 25 °C
TC = 90 °C
ICpuls
46
70
Diode forward current
TC = 90 °C
IF
18
Pulsed diode current,
tp = 1 ms
TC = 25 °C
IFpuls
108
Power dissipation
TC = 25 °C
Ptot
300
W
Chip or operating temperature
Tj
-55 ... + 150
°C
Storage temperature
Tstg
-55 ... + 150


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